MATERIAL-DEPENDENT AMORPHIZATION AND EPITAXIAL CRYSTALLIZATION IN ION-IMPLANTED ALAS/GAAS LAYER STRUCTURES

被引：27

作者：

CULLIS, AG ^{[1
]}

CHEW, NG ^{[1
]}

WHITEHOUSE, CR ^{[1
]}

JACOBSON, DC ^{[1
]}

POATE, JM ^{[1
]}

PEARTON, SJ ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.101657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1211 / 1213

页数：3

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