PREPARATION OF FERROELECTRIC BI4TI3O12 THIN-FILMS WITH C-AXIS ORIENTATION BY ATMOSPHERIC-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：41
|
作者：
YOSHIMURA, K
ISHINABE, M
OKAMURA, S
TSUKAMOTO, T
机构：
[1] Department of Applied Physics, Science University of Tokyo, Tokyo, 162, 1-3 Kagurazaka, Shinjuku-ku
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 5A期
关键词：
THIN FILM; BI4TI3O12; MOCVD; BI(O-C7H7)(3); TI(I-OC3H7)(2)(DPM)(2); FERROELECTRICS;
D O I：
10.1143/JJAP.34.2425
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ferroelectric Bi4Ti3O12 thin films were prepared by the metal-organic chemical vapor deposition (MOCVD) method at atmospheric pressure using Bi(o-C7H7)(3) and Ti(i-OC3H7)(2)(DPM)(2) as metalorganic sources. Assist Ar gas flow rate effects on the growth of the thin films were also examined. Thin films obtained were characterized by XRD analysis, SEM, AFM and D-E hysteresis loop observations. Most of the single-phase Bi4Ti3O12 thin films with c-axis orientation were deposited on Pt/Ti/SiO2/Si and Pt substrates above 500 degrees C. Completely c-axis-oriented Bi4Ti3O12 thin films were prepared on Pt plates at 600 degrees C, which showed good ferroelectric properties: remanent polarization of 1.0 mu C/cm(2), coercive field of 18 kV/cm and leakage current on the order of 10(-9) A/cm(2).
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页码：2425 / 2429
页数：5
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