INTERACTION OF CS WITH THE GAAS(100) SURFACE

被引：36

作者：

KAMARATOS, M ^{[1
]}

BAUER, E ^{[1
]}

机构：

[1] TECH UNIV CLAUSTHAL,INST PHYS,W-3392 CLAUSTHAL ZELLERFE,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 12期

关键词：

D O I：

10.1063/1.349711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Cs/GaAs(100) system is studied by Auger electron spectroscopy, electron energy-loss spectroscopy, work function change measurements, low-energy electron diffraction, and thermal desorption spectroscopy at 200 K and at room temperature. At room temperature the Cs layer is nonmetallic; at low temperature there is clear evidence for metallization after completion of the first monolayer.

引用

页码：7564 / 7572

页数：9

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