PROPERTIES OF PHOTOSENSOR WITH AMORPHOUS SI-H/SIOX-H DOUBLE-LAYER STRUCTURE

被引：6

作者：

HAGA, K ^{[1
]}

MURAKAMI, A ^{[1
]}

ADACHI, K ^{[1
]}

KUMANO, M ^{[1
]}

WATANABE, H ^{[1
]}

机构：

[1] SENDAI NATL COLL TECHNOL,SENDAI 98931,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 03期

关键词：

SILICON-OXYGEN ALLOY FILM; PHOTOSENSOR; PHOTORESPONSE; GLOW DISCHARGE; WIDE OPTICAL GAP; XPS; THERMAL STABILITY;

D O I：

10.1143/JJAP.31.925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new amorphous silicon photosensor with glass/Cr/a-Si:H/a-SiOx:H/ITO structure was prepared. Initially, the photoresponse of this structure to a light pulse is about 750 times slower than that of the photosensor with the inverse (glass/ITO/a-SiOx:H/a-Si:H/Cr) structure. The X-ray photoemission spectra show that the a-SiOx:H surface is additionally oxidized during deposition of the ITO electrode. A fast response with a rise time of less than 1 ms can be obtained by treating the a-SiOx:H surface with boron plasma or depositing the boron-doped a-SiOx:H layer onto the undoped a-SiOx:H layer before the ITO deposition.

引用

收藏

页码：925 / 931

页数：7

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