ELECTROABSORPTION ON THE INDIRECT GAP OF AS2SE3

被引：13

作者：

ALTHAUS, HL

WEISER, G

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1980年 / 99卷 / 01期

关键词：

D O I：

10.1002/pssb.2220990127

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：277 / 284

页数：8

共 18 条

[1] OPTICAL-SPECTRA AND BAND-STRUCTURE OF AS2SE3 [J].

ALTHAUS, HL ;

WEISER, G ;

NAGEL, S .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 87 (01) :117-128

[2]

ALTHAUS HL, 1980, PHYS STAT SOL B, V99

[3] INFLUENCE OF ELECTRIC FIELD ON EXCITON ABSORPTION IN GERMANIUM [J].

ARONOV, AG ;

MOCHAN, IV ;

ZEMSKII, VI .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 45 (02) :395-&

[4]

BARDEEN J, 1954, PHOTOCONDUCTIVITY C, P146

[5] ELECTRONIC-STRUCTURE OF ARSENIC CHALCOGENIDES [J].

BULLETT, DW .

PHYSICAL REVIEW B, 1976, 14 (04) :1683-1692

[6] ABSORPTION AND ELECTROABSORPTION OF TRIGONAL SELENIUM NEAR FUNDAMENTAL ABSORPTION-EDGE [J].

FISCHER, R .

PHYSICAL REVIEW B, 1972, 5 (08) :3087-&

[7]

KOLOMIETS BT, 1975, SOV PHYS SEMICOND+, V9, P465

[8]

KOLOMIETS BT, 1975, FIZ TEKH POLUPROV, V9, P710

[9]

KOLOMIETS BT, 1972, J NON-CRYST SOLIDS, V8, P1010

[10] TEMPERATURE-DEPENDENT ELECTROABSORPTION ON INDIRECT EDGE OF TRIGONAL SELENIUM [J].

LINGELBACH, W ;

TREUSCH, J ;

STUKE, J ;

WEISER, G .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :243-+

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