TYPE INVERSION IN SILICON DETECTORS

被引：96

作者：

PITZL, D ^{[1
]}

CARTIGLIA, N ^{[1
]}

HUBBARD, B ^{[1
]}

HUTCHINSON, D ^{[1
]}

LESLIE, J ^{[1
]}

OSHAUGHNESSY, K ^{[1
]}

ROWE, W ^{[1
]}

SADROZINSKI, HFW ^{[1
]}

SEIDEN, A ^{[1
]}

SPENCER, E ^{[1
]}

ZIOCK, HJ ^{[1
]}

FERGUSON, P ^{[1
]}

HOLZSCHEITER, K ^{[1
]}

SOMMER, WF ^{[1
]}

机构：

[1] UNIV CALIF LOS ALAMOS SCI LAB,LOS ALAMOS,NM 87545

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1992年 / 311卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(92)90854-W

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Silicon strip detectors and photodiodes were irradiated in an 800 MeV proton beam. The change of the effective doping concentration was monitored by measuring diode C-V curves. Type inversion is observed at a fluence phi = 1.5 x 10(13) cm-2 Further evidence for type inversion is obtained from a study of pulses generated by an infrared LED in silicon strip detectors. A two-level parametrization is used to describe donor removal and acceptor state creation during proton irradiation: N(eff) = N(O) exp(- c-phi)- beta-PHI. We measure values of c = (5.5 +/- 1.1) x 10(14) cm2 and beta = (0.031 +/- 0.006) cm-1. After type inversion the depletion voltage increases with proton fluence. This may set the limit for the lifetime of silicon detectors at future colliders. However. the occurrence of type inversion does not degrade the performance of silicon strip detectors. The effective doping concentration showed a complex post irradiation behaviour. After a short term annealing period the doping concentration increased beyond the value that had been reached immediately after the exposure.

引用

页码：98 / 104

页数：7

共 16 条

[1] LEAKAGE CURRENT, ANNEALING, AND DEEP DEFECT PRODUCTION STUDIES IN NEUTRON-IRRADIATED N-TYPE SI-DETECTORS [J].