SELECTIVE EPITAXIAL-GROWTH ON (100) VICINAL GAAS-SURFACES BY ATMOSPHERIC PRESSURE-METALORGANIC CHEMICAL VAPOR-DEPOSITION USING DIETHYLGALLIUMCHLORIDE

被引：9

作者：

YAMAGUCHI, K

OKAMOTO, K

机构：

[1] University of Electro-Communications, Chofu, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 2B期

关键词：

METALORGANIC CHEMICAL VAPOR DEPOSITION; DIETHYLGALLIUMCHLORIDE; GAAS; STEP FLOW; SELECTIVE EPITAXIAL GROWTH; REEVAPORATION;

D O I：

10.1143/JJAP.30.L231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Selective epitaxial growth of the step-flow mode is observed on (100) vicinal GaAs surfaces by atmospheric-pressure metalorganic chemical vapor deposition (MOCVD) using diethylgalliumchloride (DEGaCl). The extremely falt surface obtained is identified as an exactly (100)-oriented plane and extends from one side of the mask edge (upstream edge of step flow) toward the downstream region of the step flow. The step-flow-mode growth was observed in a wide range of growth conditions, and it is suggested that the enhancement of the reevaporation of GaCl species suppresses two-dimensional nucleation on the terrace surfaces.

引用

页码：L231 / L234

页数：4

共 33 条

[31] Isotropic/anisotropic selective epitaxial growth of Si on local oxidation of silicon (LOCOS) patterned Si(100) substrate by cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD)
Lim, SH
Song, SC
Park, TS
Lee, SY
Lee, GD
Lee, JH
Yoon, E
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (6B): : 3966 - 3970
[32] Growth of ultra-high mobility In0.52Al0.48As/InxGa1-xAs (x ≥ 53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition
Li, Qiang
Tang, Chak Wah
Lau, Kei May
APPLIED PHYSICS EXPRESS, 2014, 7 (04)
[33] GROWTH OF II-VI COMPOUNDS BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION - STRUCTURAL CHARACTERIZATION OF DIMETHYLCADMIUM-N,N,N',N'-TETRAMETHYLETHANE-1,2-DIAMINE BY GAS-PHASE ELECTRON-DIFFRACTION AND ITS USE IN THE GROWTH OF EPITAXIAL LAYERS OF CDS AND CDSE UPON GAAS
ALMOND, MJ
BEER, MP
HAGEN, K
RICE, DA
WRIGHT, PJ
JOURNAL OF MATERIALS CHEMISTRY, 1991, 1 (06) : 1065 - 1070

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