SELECTIVE EPITAXIAL-GROWTH ON (100) VICINAL GAAS-SURFACES BY ATMOSPHERIC PRESSURE-METALORGANIC CHEMICAL VAPOR-DEPOSITION USING DIETHYLGALLIUMCHLORIDE

Selective epitaxial growth of the step-flow mode is observed on (100) vicinal GaAs surfaces by atmospheric-pressure metalorganic chemical vapor deposition (MOCVD) using diethylgalliumchloride (DEGaCl). The extremely falt surface obtained is identified as an exactly (100)-oriented plane and extends from one side of the mask edge (upstream edge of step flow) toward the downstream region of the step flow. The step-flow-mode growth was observed in a wide range of growth conditions, and it is suggested that the enhancement of the reevaporation of GaCl species suppresses two-dimensional nucleation on the terrace surfaces.