SELECTIVE EPITAXIAL-GROWTH ON (100) VICINAL GAAS-SURFACES BY ATMOSPHERIC PRESSURE-METALORGANIC CHEMICAL VAPOR-DEPOSITION USING DIETHYLGALLIUMCHLORIDE

被引：9
|
作者：
YAMAGUCHI, K
OKAMOTO, K
机构：
[1] University of Electro-Communications, Chofu, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 2B期
关键词：
METALORGANIC CHEMICAL VAPOR DEPOSITION; DIETHYLGALLIUMCHLORIDE; GAAS; STEP FLOW; SELECTIVE EPITAXIAL GROWTH; REEVAPORATION;
D O I：
10.1143/JJAP.30.L231
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Selective epitaxial growth of the step-flow mode is observed on (100) vicinal GaAs surfaces by atmospheric-pressure metalorganic chemical vapor deposition (MOCVD) using diethylgalliumchloride (DEGaCl). The extremely falt surface obtained is identified as an exactly (100)-oriented plane and extends from one side of the mask edge (upstream edge of step flow) toward the downstream region of the step flow. The step-flow-mode growth was observed in a wide range of growth conditions, and it is suggested that the enhancement of the reevaporation of GaCl species suppresses two-dimensional nucleation on the terrace surfaces.
引用
收藏
页码：L231 / L234
页数：4
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