RADIATIVE AND NONRADIATIVE RECOMBINATION OF BOUND EXCITONS IN GAP-N .3. REVERSE TUNNELING OF BOUND EXCITONS

被引：6

作者：

HONG, Q

DOU, K

ZHANG, XY

机构：

[1] Changchun Institute of Physics, Academia Sinica, Changchun 130 021, Jilin

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.41.1386

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the features of the low-temperature luminescence spectra of GaP:N under the high-density selective excitation of excitons bound to NN1 isoelectronic traps. The mechanism of the bound exciton tunneling from deep traps to shallow ones is discussed and the tunneling probability is derived. Luminescence dynamics analysis supports such a tunneling model. © 1990 The American Physical Society.

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页码：1386 / 1389

页数：4

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