DETERMINATION OF THE TOTAL EMITTANCE OF NORMAL-TYPE GAAS WITH APPLICATION TO CZOCHRALSKI GROWTH

被引:71
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JORDAN, AS
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10.1063/1.327845
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O59 [应用物理学];
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页码:2218 / 2227
页数:10
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[11]   INFRA-RED ABSORPTION IN SEMICONDUCTORS [J].
FAN, HY .
REPORTS ON PROGRESS IN PHYSICS, 1956, 19 :107-155
[12]   FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS .4. INTER-CONDUCTION BAND TRANSITIONS [J].
HAGA, E ;
KIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (09) :1596-&
[13]  
Jenkins F. A., 1976, FUNDAMENTALS OPTICS
[14]   OPTICAL ABSORPTION IN CHROMIUM DOPED HIGH RESISTIVITY GAAS IN 0.6 TO 1.5 EV RANGE [J].
JONES, CE ;
HILTON, AR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (05) :504-&
[15]  
JORDAN AS, 1980, J CRYST GROWTH, V49
[16]  
JORDAN AS, 1980, BELL SYST TECH J, V59
[17]   ANALYTIC APPROXIMATIONS FOR FERMI ENERGY OF AN IDEAL FERMI GAS [J].
JOYCE, WB ;
DIXON, RW .
APPLIED PHYSICS LETTERS, 1977, 31 (05) :354-356
[18]   THERMAL RADIATION FROM PARTIALLY TRANSPARENT REFLECTING BODIES [J].
MCMAHON, HO .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1950, 40 (06) :376-380
[19]  
MILVIDSK.MG, 1966, FIZ TVERD TELA+, V7, P2784
[20]  
Moss T. S., 1973, SEMICONDUCTOR OPTO E, DOI 10.1016/C2013-0-04197-7