DETERMINATION OF THE TOTAL EMITTANCE OF NORMAL-TYPE GAAS WITH APPLICATION TO CZOCHRALSKI GROWTH

被引:70
作者
JORDAN, AS
机构
关键词
D O I
10.1063/1.327845
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2218 / 2227
页数:10
相关论文
共 36 条
[1]  
Abramowitz M., 1970, HDB MATH FNCTIONS
[2]  
AFROMOWITZ MA, 1968, 9TH P INT C PHYS SEM, P98
[3]  
BILENKO DI, 1974, SOV PHYS SEMICOND+, V8, P804
[4]   VALENCE BAND STRUCTURE OF III-V COMPOUNDS [J].
BRAUNSTEIN, R ;
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) :1423-&
[5]  
BREKHOVSKII VF, 1964, INZH FIZ ZH, V7, P66
[6]  
Brice J. C., 1968, Journal of Crystal Growth, V2, P395, DOI 10.1016/0022-0248(68)90035-3
[7]  
CARDONA M, 1961, P INT C SEM PHYS PRA, P388
[8]  
Carslaw H. S., 1958, CONDUCTION HEAT SOLI
[9]   CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].
CASEY, HC ;
SELL, DD ;
WECHT, KW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257
[10]   INFRARED ABSORPTION IN N-TYPE GERMANIUM [J].
FAN, HY ;
SPITZER, W ;
COLLINS, RJ .
PHYSICAL REVIEW, 1956, 101 (02) :566-572