ORIGIN OF HIGH RESISTANCE AT EPITAXIAL LAYER-SUBSTRATE INTERFACE OF GAAS GROWN BY VAPOR EPITAXY

被引：18
作者：
IWASAKI, H
SUGIBUCHI, K
机构：
来源：
APPLIED PHYSICS LETTERS | 1971年 / 18卷 / 10期
关键词：
D O I：
10.1063/1.1653477
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：420 / +
页数：1
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