IMPROVEMENT OF SOFT-ERROR RATE IN MOS SRAMS

被引：2
|
作者：
MURAKAMI, S [1 ]
ICHINOSE, K [1 ]
ANAMI, K [1 ]
KAYANO, S [1 ]
机构：
[1] MITSUBISHI ELECTR CO,LSI RES & DEV LAB,NOVEL CIRCUIT DESIGN GRP,ITAMI,HYOGO 664,JAPAN
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1989年 / 24卷 / 04期
关键词：
D O I：
10.1109/4.34063
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：869 / 873
页数：5
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