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- [1] PHOTO-IONIZATION OF DEEP IMPURITY CENTERS IN THE CASE OF A PHOTON ENERGY DEFICIT SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1044 - 1046
- [2] PHOTO-IONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS DOPED WITH TRANSITION-ELEMENTS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (12): : 1415 - 1416
- [3] PHOTO-IONIZATION OF DEEP IMPURITY LEVELS IN SEMICONDUCTORS JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (03): : 359 - 368
- [4] DRAG OF ELECTRONS BY SOLITONS IN A SUPERLATTICE IN THE COURSE OF IONIZATION OF IMPURITY CENTERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (04): : 446 - 447
- [5] PHOTO-IONIZATION CROSS-SECTION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS WITH HIGHLY ANISOTROPIC BANDS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (10): : 1130 - 1131
- [6] ZERO-PHONON PHOTO-IONIZATION OF DEEP CENTERS IN GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (03): : 300 - 302
- [9] PHOTO-IONIZATION OF DEEP IMPURITIES IN SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08): : 884 - 886
- [10] PHOTO-IONIZATION OF DEEP IMPURITIES IN SEMICONDUCTORS JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (06): : 1077 - &