DIFFUSED EPITAXIAL GAALAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FOR HIGH-FREQUENCY OPERATION

被引：33
|
作者：
ANKRI, D
SCAVENNEC, A
BESOMBES, C
COURBET, C
HELIOT, F
RIOU, J
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期
关键词：
D O I：
10.1063/1.93271
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：816 / 818
页数：3
相关论文
共 50 条
  • [11] GAAS GAASSB BASED HETEROJUNCTION BIPOLAR-TRANSISTOR
    KHAMSEHPOUR, B
    SINGER, KE
    ELECTRONICS LETTERS, 1990, 26 (14) : 965 - 967
  • [12] GAAS-SI HETEROJUNCTION BIPOLAR-TRANSISTOR
    CHEN, J
    WON, T
    UNLU, MS
    MORKOC, H
    VERRET, D
    APPLIED PHYSICS LETTERS, 1988, 52 (10) : 822 - 824
  • [13] A PNP ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
    CHAND, N
    HENDERSON, T
    FISCHER, R
    KOPP, W
    MORKOC, H
    GIACOLETTO, LJ
    APPLIED PHYSICS LETTERS, 1985, 46 (03) : 302 - 304
  • [14] HIGH-FREQUENCY PNP ALGAAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH AN ULTRATHIN STRAINED BASE
    LIU, WU
    HILL, D
    COSTA, D
    HARRIS, JS
    ELECTRONICS LETTERS, 1990, 26 (24) : 2000 - 2002
  • [15] A NUMERICAL-MODEL OF HETEROJUNCTION BIPOLAR-TRANSISTOR HIGH-FREQUENCY PERFORMANCE FOR DEVICE DESIGN
    KHRENOV, G
    RYZHII, V
    KARTASHOV, S
    COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING, 1994, 13 (04) : 671 - 676
  • [16] Analysis and synthesis of high-frequency bipolar-transistor oscillators
    Petrov, BE
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 1998, 43 (03) : 333 - 341
  • [17] ORIGIN OF HIGH OFFSET VOLTAGE IN AN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
    LEE, SC
    KAU, JN
    LIN, HH
    APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1114 - 1116
  • [18] MICROWAVE PNP ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
    BAYRAKTAROGLU, B
    CAMILLERI, N
    LAMBERT, SA
    ELECTRONICS LETTERS, 1988, 24 (04) : 228 - 229
  • [19] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR DECISION CIRCUIT
    SWARTZ, RG
    LUNARDI, LM
    MALIK, RJ
    ARCHER, VD
    FEUER, MD
    WALKER, JF
    FULLOWAN, TR
    ELECTRONICS LETTERS, 1989, 25 (02) : 118 - 119
  • [20] GAAIAS-GAAS BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTOR
    ANKRI, D
    EASTMAN, LF
    ELECTRONICS LETTERS, 1982, 18 (17) : 750 - 751
12345