DIFFUSED EPITAXIAL GAALAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FOR HIGH-FREQUENCY OPERATION

被引：33
作者：
ANKRI, D
SCAVENNEC, A
BESOMBES, C
COURBET, C
HELIOT, F
RIOU, J
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期
关键词：
D O I：
10.1063/1.93271
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：816 / 818
页数：3
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