Engineered heterostructures of 6.1 angstrom III-V semiconductors for advanced electronic and optoelectronic applications

被引：14

作者：

Shanabrook, BV ^{[1
]}

Barvosa-Carter, W ^{[1
]}

Bass, R ^{[1
]}

Bennett, BR ^{[1
]}

Boos, JB ^{[1
]}

Bewley, WW ^{[1
]}

Bracker, AS ^{[1
]}

Culbertson, JC ^{[1
]}

Glaser, ER ^{[1
]}

Kruppa, W ^{[1
]}

Magno, R ^{[1
]}

Moore, WJ ^{[1
]}

Meyer, JR ^{[1
]}

Nosho, BZ ^{[1
]}

Park, D ^{[1
]}

Thibado, PM ^{[1
]}

Twigg, ME ^{[1
]}

Wagner, RJ ^{[1
]}

Waterman, JR ^{[1
]}

Whitman, LJ ^{[1
]}

Yang, MJ ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

ENGINEERED NANOSTRUCTURAL FILMS AND MATERIALS | 1999年 / 3790卷

关键词：

high-speed electronics; IR lasers; IR detectors; band structure engineering; epitaxy; InAs; GaSb; AlSb;

D O I：

10.1117/12.351249

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heterostructures formed from III-V semiconductors with the 6.1 Angstrom lattice spacing (InAs, GaSb, AlSb and related alloys) have attracted significant interest because of their potential to define a new 'state of the art' in applications including 100 GHz high-speed logic circuits, terahertz transistors, sensitive infrared detectors and mid-infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop the materials growth and fabrication technology for a variety of 6.1 A-based devices which have the potential to revolutionize infrared optoelectronics and low-power, high-speed electronics.

引用

页码：13 / 22

页数：10

共 29 条

[1] CONTROL OF INTERFACE STOICHIOMETRY IN INAS/GASB SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
BENNETT, BR
SHANABROOK, BV
WAGNER, RJ
DAVIS, JL
WATERMAN, JR
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (07) : 949 - 951
[2] INTERFACE CONTROL IN INAS/ALSB SUPERLATTICES
BENNETT, BR
SHANABROOK, BV
GLASER, ER
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (05) : 598 - 600
[3] Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers
Bennett, BR
Yang, MJ
Shanabrook, BV
Boos, JB
Park, D
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (10) : 1193 - 1195
[4] High-temperature continuous-wave 3-6.1 μm "W'' lasers with diamond-pressure-bond heat sinking
Bewley, WW
Felix, CL
Vurgaftman, I
Stokes, DW
Aifer, EH
Olafsen, LJ
Meyer, JR
Yang, MJ
Shanabrook, BV
Lee, H
Martinelli, RU
Sugg, AR
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (08) : 1075 - 1077
[5] Above-room-temperature optically pumped midinfrared W lasers
Bewley, WW
Felix, CL
Aifer, EH
Vurgaftman, I
Olafsen, LJ
Meyer, JR
Lee, H
Martinelli, RU
Connolly, JC
Sugg, AR
Olsen, GH
Yang, MJ
Bennett, BR
Shanabrook, BV
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (26) : 3833 - 3835
[6] AlSb/InAs HEMTs using modulation InAs(Si)-doping
Boos, JB
Bennett, BR
Kruppa, W
Park, D
Yang, MJ
Shanabrook, BV
[J]. ELECTRONICS LETTERS, 1998, 34 (04) : 403 - 404
[7] Ohmic contacts in AlSb InAs high electron mobility transistors for low-voltage operation
Boos, JB
Bennett, BR
Kruppa, W
Park, D
Mittereder, J
Bass, R
Twigg, ME
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03): : 1022 - 1027
[8] 0.1μm AlSb/InAs HEMTs with InAs subchannel
Boos, JB
Yang, MJ
Bennett, BR
Park, D
Kruppa, W
Yang, CH
Bass, R
[J]. ELECTRONICS LETTERS, 1998, 34 (15) : 1525 - 1526
[9] OSCILLATIONS UP TO 712 GHZ IN INAS/ALSB RESONANT-TUNNELING DIODES
BROWN, ER
SODERSTROM, JR
PARKER, CD
MAHONEY, LJ
MOLVAR, KM
MCGILL, TC
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (20) : 2291 - 2293
[10] FAR-INFRARED PHOTORESPONSE OF THE INAS/GAINSB SUPERLATTICE
CAMPBELL, IH
SELA, I
LAURICH, BK
SMITH, DL
BOLOGNESI, CR
SAMOSKA, LA
GOSSARD, AC
KROEMER, H
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (07) : 846 - 848

← 1 2 3 →