GENERATION OF DIAMOND NUCLEI ON AMORPHOUS SIO2 BY ALTERNATING-CURRENT BIAS MICROWAVE PLASMA CHEMICAL-VAPOR-DEPOSITION

被引：9

作者：

MAO, MY

JIN, XF

WANG, TP

XIE, JF

TAN, SS

WANG, WY

ZHANG, XK

ZHUANG, ZC

机构：

[1] FUDAN UNIV,FUDAN TD LEE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA

[2] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA

[3] CHINESE ACAD SCI,SHANGHAI INST MET,STATE KEY LABS FUNCT MAT INFORMAT,SHANGHAI 200050,PEOPLES R CHINA

[4] JIAO TONG UNIV,CTR PHYS & CHEM,SHANGHAI 200030,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 01期

关键词：

D O I：

10.1063/1.114166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nucleation of diamond on the amorphous SiO2 mirror surface has been achieved by means of adding an ac signal to the negative dc bias in the microwave plasma chemical vapor deposition. It is found in experiment that the nucleation of diamond happens only after the frequency of the ac signal exceeds a threshold. The results also show that the diamond nucleation density depends not only on the ac frequency but also on the magnitudes of the ac signal and the dc bias.© 1995 American Institute of Physics.

引用

页码：16 / 18

页数：3

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