FERROELECTRIC FIELD-EFFECT MEMORY DEVICE USING BI4TI3O12 FILM

被引：224
|
作者：
SUGIBUCHI, K [1 ]
KUROGI, Y [1 ]
ENDO, N [1 ]
机构：
[1] NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 07期
关键词：
D O I：
10.1063/1.322014
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2877 / 2881
页数：5
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