FERROELECTRIC FIELD-EFFECT MEMORY DEVICE USING BI4TI3O12 FILM

被引：225

作者：

SUGIBUCHI, K ^{[1
]}

KUROGI, Y ^{[1
]}

ENDO, N ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 07期

关键词：

D O I：

10.1063/1.322014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2877 / 2881

页数：5

共 20 条

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[3]

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[6] A FERROELECTRIC FIELD EFFECT DEVICE [J].

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[7] IMPURITY CONTROL OF DOMAIN SWITCHING IN FERROELECTRIC BISMUTH TITANATE [J].

LUKE, TE .

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[8] IMPROVED FERROELECTRIC FIELD-EFFECT DEVICES [J].

MCCUSKER, JH ;

PERLMAN, SS .

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[9] DEPOLARIZATION FIELDS IN THIN FERROELECTRIC FILMS [J].

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[10]

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