DISLOCATION-POINT DEFECTS INTERACTION IN SEMICONDUCTORS AND KINK MOBILITY

被引：1
|
作者：
NIKITENKO, VI
FARBER, BY
IUNIN, YL
ORLOV, VI
机构：
[1] Institute for Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow district
来源：
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1993年 / 164卷 / 1-2期
关键词：
D O I：
10.1016/0921-5093(93)90690-G
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The results are presented of an experimental study of the mobility of individual dislocations in silicon single crystals under a periodic two-level loading. The loadings have been employed to study a mean distance covered by dislocations as a function of load pulse duration and intervals between them at different shear stress levels. A description of the experimental data obtained for the kink migration in the field of random force has been examined. The qualitative agreement of the experimental data with calculations is shown.
引用
收藏
页码：346 / 349
页数：4
相关论文
共 50 条
12345