KINETIC SURFACE ROUGHENING OF SI(001) DURING SUBLIMATION

被引：51
|
作者：
METOIS, JJ
WOLF, DE
机构：
[1] UNIV AIX MARSEILLE 3,CNRS,LAB PROPRE,F-13628 AIX EN PROVENCE,FRANCE
[2] UNIV DUISBURG GESAMTHSCH,FB 10,W-4100 DUISBURG 1,GERMANY
来源：
SURFACE SCIENCE | 1993年 / 298卷 / 01期
关键词：
D O I：
10.1016/0039-6028(93)90081-T
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Experimental evidence is given that the sublimation rate of vicinal silicon (001) surfaces depends on the misorientation. Three regimes are studied: step flow without and with Lochkeim-formation on the terraces, as well as the high temperature regime, where the surface becomes atomically rough. Qualitatively these observations are in agreement with theoretical predictions of the anisotropic KPZ-theory.
引用
收藏
页码：71 / 78
页数：8
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