IMPURITY CONDUCTION AT LOW CONCENTRATIONS

被引：2276

作者：

MILLER, A

ABRAHAMS, E

机构：

来源：

PHYSICAL REVIEW | 1960年 / 120卷 / 03期

关键词：

D O I：

10.1103/PhysRev.120.745

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：745 / 755

页数：11

共 28 条

[1]

ABRAHAMS E, 1957, PHYS REV, V107, P481

[2] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].

BARDEEN, J ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1950, 80 (01) :72-80

[3] IMPURITY CONDUCTION IN INDIUM-DOPED GERMANIUM [J].

BLAKEMORE, JS .

PHILOSOPHICAL MAGAZINE, 1959, 4 (41) :560-576

[4] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J].

CONWELL, EM .

PHYSICAL REVIEW, 1956, 103 (01) :51-60

[5] EXCHANGE EFFECTS IN SPIN RESONANCE OF IMPURITY ATOMS IN SILICON [J].

FEHER, G ;

FLETCHER, RC ;

GERE, EA .

PHYSICAL REVIEW, 1955, 100 (06) :1784-1786

[6] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .2. ELECTRON SPIN RELAXATION EFFECTS [J].

FEHER, G ;

GERE, EA .

PHYSICAL REVIEW, 1959, 114 (05) :1245-1256

[7] EFFECT OF MINORITY IMPURITIES ON IMPURITY CONDUCTION IN P-TYPE GERMANIUM [J].

FRITZSCHE, H ;

LARKHOROVITZ, K .

PHYSICAL REVIEW, 1959, 113 (04) :999-1001

[8] IMPURITY CONDUCTION IN TRANSMUTATION-DOPED P-TYPE GERMANIUM [J].

FRITZSCHE, H ;

CUEVAS, M .

PHYSICAL REVIEW, 1960, 119 (04) :1238-1245

[9] RESISTIVITY AND HALL COEFFICIENT OF ANTIMONY-DOPED GERMANIUM AT LOW TEMPERATURES [J].

FRITZSCHE, H .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (01) :69-80

[10] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J].

FRITZSCHE, H .

PHYSICAL REVIEW, 1955, 99 (02) :406-419

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