THE INITIAL-STAGES OF THE OXIDATION OF SI(100)2X1 STUDIED BY STM

被引：55

作者：

UDAGAWA, M ^{[1
]}

UMETANI, Y ^{[1
]}

TANAKA, H ^{[1
]}

ITOH, M ^{[1
]}

UCHIYAMA, T ^{[1
]}

WATANABE, Y ^{[1
]}

YOKOTSUKA, T ^{[1
]}

SUMITA, I ^{[1
]}

机构：

[1] MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN

来源：

ULTRAMICROSCOPY | 1992年 / 42卷

关键词：

D O I：

10.1016/0304-3991(92)90383-U

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The initial stages of the oxidation of the Si(100)2 x 1 surface was studied at room temperature by scanning tunneling microscopy (STM). We found that "type-C defects' which are believed to be two half-dimers have a strong preference for oxidation, compared with areas having no defects. Oxidized type-C defects appear to be depressions in both positive and negative sample bias voltages. We also found two oxidized sites having no defects. Single steps are quite stable against oxidation. The oxidation of the Si(100)2 x 1 surface is discussed in terms of these sites.

引用

页码：946 / 951

页数：6

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