GaAs / GaInNAs SOLAR CELLS WITH MULTIPLE QUANTUM WELLS AND SUPERLATTICES

被引:0
作者
Courel, M. [1 ]
Rimada, J. C. [1 ]
Hernandez, L. [2 ]
机构
[1] Univ La Habana, IMRE, Havana, Cuba
[2] Univ La Habana, Fac Fis, Havana, Cuba
来源
REVISTA CUBANA DE FISICA | 2011年 / 28卷 / 1E期
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A theoretical study of the GaAs/GaInNAs solar cells based on a multi-quantum wells (MQWSC) and superlattices (SLSC) configuration is presented for the first time. The conversion efficiency as a function of wells width and depth is modeled. The photon absorption increases with the quantum well levels incorporation and therefore the photocurrent as well. It is shown that the MQWSC efficiency overcomes the solar cells without quantum wells about 25%. A study of the SLSC viability is also presented. The conditions for resonant tunneling are established by the matrix transfer method for a superlattice with variable quantum wells width. The effective density of states and the absorption coefficients for SL structure are calculated in order to determinate the J-V characteristic. The influence of the superlattice or cluster width in the cell efficiency is researched showing a better performance when width and the number of cluster are increased. The SLSC efficiency is compared with the optimum efficiency obtained for the MQWSC showing that it is reached an amazing in-crement of 27%.
引用
收藏
页码:1E71 / 1E75
页数:5
相关论文
共 50 条
  • [41] 1.3 μm VCSELs:: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots-three candidates as active material
    Gilet, Ph.
    Pougeoise, E.
    Grenouillet, L.
    Grosse, Ph.
    Olivier, N.
    Poncet, S.
    Chelnokov, A.
    Gerard, J. M.
    Stevens, R.
    Hamelin, R.
    Hammar, M.
    Berggren, J.
    Sundgren, P.
    VERTICAL - CAVITY SURFACE - EMITTING LASERS XI, 2007, 6484
  • [42] Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells
    Al, E. B.
    Ungan, F.
    Yesilgul, U.
    Kasapoglu, E.
    Sari, H.
    Sokmen, I.
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2016, 30 (22):
  • [43] Electronic band structures of GaInNAs/GaAs compressive strained quantum wells
    Fan, WJ
    Yoon, SF
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (02) : 843 - 847
  • [44] EXCITON LONGITUDINAL-TRANSVERSE SPLITTING IN GAAS/ALGAAS SUPERLATTICES AND MULTIPLE QUANTUM WELLS
    IVCHENKO, EL
    KOCHERESHKO, VP
    KOPEV, PS
    KOSOBUKIN, VA
    URALTSEV, IN
    YAKOVLEV, DR
    SOLID STATE COMMUNICATIONS, 1989, 70 (05) : 529 - 534
  • [45] Effect of nonradiative recombination on carrier dynamics in GaInNAs/GaAs quantum wells
    Sun Zheng
    Wang Bao-Rui
    Xu Zhong-Ying
    Sun Bao-Quan
    Ji Yang
    Ni Hai-Qiao
    Niu Zhi-Chuan
    CHINESE PHYSICS LETTERS, 2006, 23 (09) : 2566 - 2569
  • [46] Photoconductivity and In-plane Photovoltage studies in GaInNAs/GaAs quantum wells
    Mazzucato, S.
    Boland-Thoms, A.
    Erol, A.
    Balkan, N.
    PHYSICA SCRIPTA, 2004, T114 : 236 - 239
  • [47] Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells
    Kryzhanovskaya, N. V.
    Moiseev, E. I.
    Polubavkina, Yu. S.
    Zubov, F. I.
    Maximov, M. V.
    Lipovskii, A. A.
    Kulagina, M. M.
    Troshkov, S. I.
    Korpijarvi, V. -M.
    Niemi, T.
    Isoaho, R.
    Guina, M.
    Lebedev, M. V.
    Lvova, T. V.
    Zhukov, A. E.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (23)
  • [48] Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates
    Aissat, A.
    Nacer, S.
    Bensebti, M.
    Vilcot, J. P.
    MICROELECTRONICS JOURNAL, 2008, 39 (01) : 63 - 66
  • [49] STRUCTURE VARIATION OF THE INDEX OF REFRACTION OF GAAS-AIAS SUPERLATTICES AND MULTIPLE QUANTUM WELLS
    KAHEN, KB
    LEBURTON, JP
    APPLIED PHYSICS LETTERS, 1985, 47 (05) : 508 - 510
  • [50] Structural and optical properties of GaInAs/GaAs and GaInNAs/GaNAs multiple quantum wells upon postgrowth annealing
    Liu, HF
    Xiang, N
    Chua, SJ
    Pessa, M
    APPLIED PHYSICS LETTERS, 2006, 88 (18)