GaAs / GaInNAs SOLAR CELLS WITH MULTIPLE QUANTUM WELLS AND SUPERLATTICES

被引:0
|
作者
Courel, M. [1 ]
Rimada, J. C. [1 ]
Hernandez, L. [2 ]
机构
[1] Univ La Habana, IMRE, Havana, Cuba
[2] Univ La Habana, Fac Fis, Havana, Cuba
来源
REVISTA CUBANA DE FISICA | 2011年 / 28卷 / 1E期
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A theoretical study of the GaAs/GaInNAs solar cells based on a multi-quantum wells (MQWSC) and superlattices (SLSC) configuration is presented for the first time. The conversion efficiency as a function of wells width and depth is modeled. The photon absorption increases with the quantum well levels incorporation and therefore the photocurrent as well. It is shown that the MQWSC efficiency overcomes the solar cells without quantum wells about 25%. A study of the SLSC viability is also presented. The conditions for resonant tunneling are established by the matrix transfer method for a superlattice with variable quantum wells width. The effective density of states and the absorption coefficients for SL structure are calculated in order to determinate the J-V characteristic. The influence of the superlattice or cluster width in the cell efficiency is researched showing a better performance when width and the number of cluster are increased. The SLSC efficiency is compared with the optimum efficiency obtained for the MQWSC showing that it is reached an amazing in-crement of 27%.
引用
收藏
页码:1E71 / 1E75
页数:5
相关论文
共 50 条
  • [1] Recombination mechanisms in GaInNAs/GaAs multiple quantum wells
    Kaschner, A
    Lüttgert, T
    Born, H
    Hoffmann, A
    Egorov, AY
    Riechert, H
    APPLIED PHYSICS LETTERS, 2001, 78 (10) : 1391 - 1393
  • [2] Quantum confined Stark effect in GaInNAs/GaAs multiple quantum wells
    Héroux, JB
    Yang, X
    Wang, WI
    IEE PROCEEDINGS-OPTOELECTRONICS, 2003, 150 (01): : 92 - 95
  • [3] Characterizations of GaInNAs/GaAs quantum wells
    Bielak, Katarzyna
    Pucicki, Damian
    Sciana, Beata
    Radziewicz, Damian
    Dawidowski, Wojciech
    Badura, Mikolaj
    Kudrawiec, Robert
    Serafinczuk, Jaroslaw
    Tlaczala, Marek
    ELECTRON TECHNOLOGY CONFERENCE 2013, 2013, 8902
  • [4] Interdiffusion of GaInNAs/GaAs quantum wells
    Chan, MCY
    Surya, C
    Wai, PKA
    PROCEEDINGS 2001 IEEE HONG KONG ELECTRON DEVICES MEETING, 2001, : 17 - 20
  • [5] Anomalous temperature dependence of photoluminescence in GaInNAs/GaAs multiple quantum wells
    Liang, XG
    Jiang, DS
    Bian, LF
    Pan, Z
    Li, LH
    Wu, RH
    CHINESE PHYSICS LETTERS, 2002, 19 (08) : 1203 - 1206
  • [6] Photoluminescence studies in modulation doped GaInNAs/GaAs multiple quantum wells
    Yilmaz, M.
    Ulug, B.
    Ulug, A.
    Cicek, A.
    Balkan, N.
    Sopanen, M.
    Reentilae, O.
    Mattila, M.
    Fontaine, C.
    Arnoult, A.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 2, 2007, 4 (02): : 682 - +
  • [7] Effects of rapid thermal annealing on GaInNAs GaAs multiple quantum wells
    Xin, HP
    Kavanagh, KL
    Kondow, M
    Tu, CW
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 419 - 422
  • [8] Evidence for indirect recombination in GaInNAs/GaAs strained multiple quantum wells
    Faradjev, FE
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 94 (2-3): : 237 - 242
  • [9] Effects of rapid thermal annealing on GaInNAs/GaAs multiple quantum wells
    Xin, H.P.
    Kavanagh, K.L.
    Kondow, M.
    Tu, C.W.
    Journal of Crystal Growth, 1999, 201 : 419 - 422
  • [10] Optical properties of GaInNAs/GaAs quantum wells
    Mazzucato, S
    Erol, A
    Potter, RJ
    Balkan, N
    Chalker, PR
    Thomas, S
    Joyce, TB
    Bullough, TJ
    SOLID-STATE ELECTRONICS, 2003, 47 (03) : 483 - 487