GAXIN1-XASYP1-Y-INP INJECTION-LASER PARTIALLY LOADED WITH 1ST-ORDER DISTRIBUTED BRAGG REFLECTOR

被引：24

作者：

KAWANISHI, H

SUEMATSU, Y

UTAKA, K

ITAYA, Y

ARAI, S

机构：

[1] Department of Physical Electronics, TokyoInstitute of Technology

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1979年 / 15卷 / 08期

关键词：

D O I：

10.1109/JQE.1979.1070074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaInAsP/InP distributed Bragg reflector (DBR) lasers with a first-order grating were demonstrated experimentally for the first time at a wavelength of 1.3 µm. Single longitudinal mode oscillation was obtained at low temperature, and the temperature dependence of the lasing wavelength was 0.7-0.8 A/deg. The equivalent refractive index of GalnAsP at the lasing wavelength of 1.3 μm was 3.50 at 186 K. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

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收藏

页码：701 / 706

页数：6

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