PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS

[1] BEAR KE, 1969, P IEEE, V57, P1469

[2] LSA OSCILLATOR-DIODE THEORY [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3096 - +

[3] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 965 - &

[4] A POLISHING ETCHANT FOR III-V SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (09) : 880 - 880

[5] ETCHING AND INHIBITION OF THE (III) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS - INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 169 - &

[6] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433

[7] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &

[8] SUPPRESSION OF TRAVELLING HIGH-FIELD-DOMAIN MODE OSCILLATIONS IN GAAS BY DIELECTRIC SURFACE LOADING [J]. ELECTRONICS LETTERS, 1969, 5 (03) : 48 - &

[9] EFFECT OF SMALL TRANSVERSE DIMENSIONS ON OPERATION OF GUNN DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11): : 2056 - +

[10] ANISOTROPIC ETCHING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4569 - &

[1] BEAR KE, 1969, P IEEE, V57, P1469

[2] LSA OSCILLATOR-DIODE THEORY [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3096 - +

[3] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 965 - &

[4] A POLISHING ETCHANT FOR III-V SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (09) : 880 - 880

[5] ETCHING AND INHIBITION OF THE (III) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS - INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 169 - &

[6] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433

[7] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &

[8] SUPPRESSION OF TRAVELLING HIGH-FIELD-DOMAIN MODE OSCILLATIONS IN GAAS BY DIELECTRIC SURFACE LOADING [J]. ELECTRONICS LETTERS, 1969, 5 (03) : 48 - &

[9] EFFECT OF SMALL TRANSVERSE DIMENSIONS ON OPERATION OF GUNN DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11): : 2056 - +

[10] ANISOTROPIC ETCHING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4569 - &