ARSENIC DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

被引：39

作者：

SHIBLI, SM

TAMARGO, MC

SKROMME, BJ

SCHWARZ, SA

SCHWARTZ, CL

NAHORY, RE

MARTIN, RJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.584851

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：187 / 191

页数：5

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