QUANTUM INTERFERENCE EFFECTS IN HIGH-MOBILITY MESOSCOPIC GAAS/ALXGA1-XAS HETEROSTRUCTURES

被引：48

作者：

SIMMONS, JA ^{[1
]}

TSUI, DC ^{[1
]}

WEIMANN, G ^{[1
]}

机构：

[1] DEUTSCH BUNDESPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER

来源：

SURFACE SCIENCE | 1988年 / 196卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(88)90668-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：81 / 88

页数：8

共 16 条

[1]

ALTSHULER BL, 1981, JETP LETT+, V33, P499

[2]

ALTSHULER BL, 1985, JETP LETT, V42, P360

[3] LENGTH-INDEPENDENT VOLTAGE FLUCTUATIONS IN SMALL DEVICES [J].

BENOIT, A ;

UMBACH, CP ;

LAIBOWITZ, RB ;

WEBB, RA .

PHYSICAL REVIEW LETTERS, 1987, 58 (22) :2343-2346

[4] 4-TERMINAL PHASE-COHERENT CONDUCTANCE [J].

BUTTIKER, M .

PHYSICAL REVIEW LETTERS, 1986, 57 (14) :1761-1764

[5] EXPERIMENTAL-DETERMINATION OF THE EDGE DEPLETION WIDTH OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GAAS/ALXGA1-XAS [J].

CHOI, KK ;

TSUI, DC ;

ALAVI, K .

APPLIED PHYSICS LETTERS, 1987, 50 (02) :110-112

[6]

CHOI KK, IN PRESS PHYS REV B

[7] NOVEL INTERFERENCE EFFECTS BETWEEN PARALLEL QUANTUM WELLS [J].

DATTA, S ;

MELLOCH, MR ;

BANDYOPADHYAY, S ;

NOREN, R ;

VAZIRI, M ;

MILLER, M ;

REIFENBERGER, R .

PHYSICAL REVIEW LETTERS, 1985, 55 (21) :2344-2347

[8] UNIVERSAL CONDUCTANCE FLUCTUATIONS IN NARROW SI ACCUMULATION LAYERS [J].

KAPLAN, SB ;

HARTSTEIN, A .

PHYSICAL REVIEW LETTERS, 1986, 56 (22) :2403-2406

[9] UNIVERSAL CONDUCTANCE FLUCTUATIONS IN METALS [J].

LEE, PA ;

STONE, AD .

PHYSICAL REVIEW LETTERS, 1985, 55 (15) :1622-1625

[10] MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].

LIN, BJF ;

TSUI, DC ;

PAALANEN, MA ;

GOSSARD, AC .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :695-697

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