MODULATION SPECTROSCOPY AS A TOOL FOR ELECTRONIC MATERIAL CHARACTERIZATION

被引：143
作者：
BOTTKA, N
GASKILL, DK
SILLMON, RS
HENRY, R
GLOSSER, R
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 02期
关键词：
D O I：
10.1007/BF02652147
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：161 / 170
页数：10
相关论文
共 34 条
[1]  
Aspnes D. E., 1980, HDB SEMICONDUCTORS, V2
[2]   DEPENDENCE OF PHOTOREFLECTANCE ON SPACE CHARGE ELECTRIC FIELDS IN GE [J].
ASPNES, DE .
SOLID STATE COMMUNICATIONS, 1970, 8 (04) :267-&
[3]   THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].
ASPNES, DE .
SURFACE SCIENCE, 1973, 37 (01) :418-442
[4]   SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].
ASPNNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652
[5]  
BLOSSEY DF, 1972, SEMICONDUCTORS SEMIM, V9
[6]  
BOTTKA N, 1981, SPIE, V276, P157
[7]  
CARDONA M, 1969, SOLID STATE PHYSIC S, V11
[8]  
DOW JD, 1973, SURF SCI, V37, P786
[9]   DEPENDENCE OF EXCITON REFLECTANCE ON FIELD AND OTHER SURFACE CHARACTERISTICS - CASE OF INP [J].
EVANGELI.F ;
FISCHBAC.JU ;
FROVA, A .
PHYSICAL REVIEW B, 1974, 9 (04) :1516-1524
[10]   ELECTRIC-FIELD-INDUCED INTERFERENCE EFFECTS AT GROUND EXCITON LEVEL IN GAAS [J].
EVANGELISTI, F ;
FISCHBACH, JU ;
FROVA, A .
PHYSICAL REVIEW LETTERS, 1972, 29 (15) :1001-+
1234