ABSORPTION DUE TO CREATION OF BOUND EXCITONS IN PHOSPHORUS-DOPED SILICON

被引：7

作者：

HENRY, MO ^{[1
]}

LIGHTOWLERS, EC ^{[1
]}

机构：

[1] UNIV LONDON,KINGS COLL,WHEATSTONE PHYS LAB,LONDON WC2R 2LS,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1977年 / 10卷 / 21期

关键词：

D O I：

10.1088/0022-3719/10/21/003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L601 / L604

页数：4

共 17 条

[1]

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[3] DONOR EXCITON SATELLITES IN CUBIC SILICON-CARBIDE - MULTIPLE BOUND EXCITONS REVISITED [J].

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[4] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].

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HAYNES, JR ;

FLOOD, WF .

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[5]

KAMINSKII AS, 1971, SOV PHYS JETP-USSR, V32, P1048

[6] NEW MODEL FOR BOUND MULTI-EXCITON COMPLEXES [J].

KIRCZENOW, G .

SOLID STATE COMMUNICATIONS, 1977, 21 (08) :713-715

[7]

KIRCZENOW G, TO BE PUBLISHED

[8]

KOHN W, 1957, SOLID STATE PHYSICS, V5

[9] NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI [J].

KOSAI, K ;

GERSHENZ.M .

PHYSICAL REVIEW B, 1974, 9 (02) :723-726

[10] OBSERVATION OF FREE-EXCITON 2-ELECTRON TRANSITIONS IN WAVELENGTH-DERIVATIVE ABSORPTION-SPECTRA OF IMPURITY-DOPED SILICON [J].

NISHINO, T ;

HAMAKAWA, Y .

PHYSICAL REVIEW B, 1975, 12 (12) :5771-5779

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