INSITU STUDY OF THE MOLECULAR-BEAM EPITAXY OF COSI2 ON (111) SI BY TRANSMISSION ELECTRON-MICROSCOPY AND DIFFRACTION

被引：70
作者：
GIBSON, JM
BATSTONE, JL
TUNG, RT
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 01期
关键词：
D O I：
10.1063/1.98882
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：45 / 47
页数：3
相关论文
共 15 条
[1]   SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].
BEAN, JC ;
POATE, JM .
APPLIED PHYSICS LETTERS, 1980, 37 (07) :643-646
[2]  
COMIN F, COMMUNICATION
[3]  
DAVITAYA FA, IN PRESS J CRYST GRO
[4]  
DAVITAYA FA, 1985, J VACUUM SCI TECHN B, V2, P770
[5]   FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J].
DHEURLE, FM ;
PETERSSON, CS .
THIN SOLID FILMS, 1985, 128 (3-4) :283-297
[6]  
FOLL H, 1982, PHILOS MAG A, V45, P31, DOI 10.1080/01418618208243901
[7]   THE CRYSTAL STRUCTURE OF CO2SI [J].
GELLER, S .
ACTA CRYSTALLOGRAPHICA, 1955, 8 (02) :83-87
[8]  
GIBSON JK, UNPUB
[9]   THE EFFECTS OF NUCLEATION AND GROWTH ON EPITAXY IN THE COSI2/SI SYSTEM [J].
GIBSON, JM ;
BEAN, JC ;
POATE, JM ;
TUNG, RT .
THIN SOLID FILMS, 1982, 93 (1-2) :99-108
[10]  
MCDONALD MG, UNPUB
12