EXCHANGE INSTABILITIES IN AN NORMAL-TYPE SILICON INVESION LAYER

被引：5
作者：
KALIA, RK
QUINN, JJ
机构：
来源：
PHYSICAL REVIEW B | 1978年 / 17卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.17.1383
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：1383 / 1387
页数：5
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