SCALING THEORY OF THE METAL-INSULATOR-TRANSITION IN AMORPHOUS MATERIALS

被引：338

作者：

MCMILLAN, WL ^{[1
]}

机构：

[1] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.24.2739

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2739 / 2743

页数：5

共 9 条

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[7] ELECTRON-TUNNELING EXPERIMENTS ON AMORPHOUS GE1-XAUX [J].

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[8] SHARP METAL-INSULATOR-TRANSITION IN A RANDOM SOLID [J].

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[9]

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