BEHAVIOR OF BORON IMPURITIES IN N-TYPE GALLIUM-ARSENIDE AND GALLIUM-PHOSPHIDE

被引：35

作者：

MORRISON, SR ^{[1
]}

NEWMAN, RC ^{[1
]}

THOMPSON, F ^{[1
]}

机构：

[1] UNIV READING,JJ THOMSON PHYS LAB,READING,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1974年 / 7卷 / 03期

关键词：

D O I：

10.1088/0022-3719/7/3/019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：633 / 644

页数：12

共 24 条

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[8]

JORDAN AS, TO BE PUBLISHED

[9] SILICON-COPPER AND SILICON-ZINC COMPLEXES IN GALLIUM-PHOSPHIDE [J].

MORRISON, SR ;

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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (03) :619-626

[10] INTERSTITIAL NITROGEN DEFECTS IN GALLIUM-PHOSPHIDE [J].

MORRISON, SR ;

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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (11) :L223-L225

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