STATIC AND DYNAMIC ELECTRON-TRANSPORT IN RESONANT-TUNNELING DIODES

被引：9
作者：
TSUCHIYA, H
OGAWA, M
MIYOSHI, T
机构：
[1] Department of Electronic Engineering, Rokko dai Nada ku, Kobe
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 03期
关键词：
WIGNER FUNCTION MODEL; RESONANT-TUNNELING; PEAK-TO-VALLEY CURRENT RATIO; DYNAMIC ELECTRON TRANSPORT; INITIAL CURRENT OVERSHOOT; ELECTRON EFFECTIVE MASS; SWITCHING TIME;
D O I：
10.1143/JJAP.31.745
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The static and dynamic behavior of resonant-tunneling diodes is studied using the improved Wigner function model. In the study of static current-voltage characteristics, the exponential decrease of the peak current with the barrier thickness and the existence of a proper barrier thickness for which the peak-to-valley current ratio becomes the maximum are demonstrated. In the large signal simulation, the external current response to an abrupt bias switch is analyzed. As a result, it is found that the switching time of resonant-tunneling diodes is principally determined by the electron effective mass of the material system used rather than by such a device structure as the thickness of the double barrier and the doping density of the electrode.
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收藏
页码：745 / 750
页数：6
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