COMPARISON OF CURRENT SPREADING IN STRIPE CONTACT SEMICONDUCTOR-LASERS

被引:1
作者
CHUA, SJ
LOW, TS
CHEN, PC
机构
来源
IEE PROCEEDINGS-J OPTOELECTRONICS | 1986年 / 133卷 / 04期
关键词
D O I
10.1049/ip-j.1986.0049
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:299 / 302
页数:4
相关论文
共 7 条
[1]   NEW STRIPE-GEOMETRY LASER WITH SIMPLIFIED FABRICATION PROCESS [J].
AMANN, MC .
ELECTRONICS LETTERS, 1979, 15 (14) :441-442
[2]   OXYGEN-IMPLANTED DOUBLE-HETEROJUNCTION GAAS-GAALAS INJECTION LASERS [J].
BLUM, JM ;
MCGRODDY, JC ;
MCMULLIN, PG ;
SHIH, KK ;
SMITH, AW ;
ZIEGLER, JF .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :413-418
[3]   LATERAL CURRENT SPREADING IN STRIPE-CONTACT SEMICONDUCTOR-LASERS [J].
CHUA, SJ ;
LEONG, MS ;
CHAN, DSH .
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (06) :302-303
[4]   GAAS DOUBLE HETEROSTRUCTURE LASING BEHAVIOR ALONG JUNCTION PLANE [J].
HAKKI, BW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :292-302
[5]   ANALYTIC APPROXIMATIONS FOR FERMI ENERGY OF AN IDEAL FERMI GAS [J].
JOYCE, WB ;
DIXON, RW .
APPLIED PHYSICS LETTERS, 1977, 31 (05) :354-356
[6]   AN ANALYTICAL SOLUTION OF THE LATERAL CURRENT SPREADING AND DIFFUSION PROBLEM IN NARROW OXIDE STRIPE (GAAL)AS GAAS DH LASERS [J].
LENGYEL, G ;
MEISSNER, P ;
PATZAK, E ;
ZSCHAUER, KH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (04) :618-625
[7]   GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE PLANAR STRIPE LASER [J].
YONEZU, H ;
SAKUMA, I ;
KOBAYASH.K ;
KAMEJIMA, T ;
UENO, M ;
NANNICHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (10) :1585-1592