CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS

被引：100

作者：

DIMARIA, DJ

GHEZ, R

DONG, DW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 09期

关键词：

D O I：

10.1063/1.328317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4830 / 4841

页数：12

共 30 条

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[10]

IRENE EA, COMMUNICATION

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