METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH AND PROPERTIES OF GAN/AL0.1GA0.9N LAYERED STRUCTURES

被引：85
|
作者：
ITOH, K
KAWAMOTO, T
AMANO, H
HIRAMATSU, K
AKASAKI, I
机构：
[1] Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya, 464-01, Furo-cho
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 9A期
关键词：
GAN/AL0.1GA0.9N LAYERED STRUCTURE; SURFACE FLATNESS; SATELLITE PEAKS OF X-RAY ROCKING CURVE; GAN WELL LAYER; PHOTOLUMINESCENCE PEAK SHIFT;
D O I：
10.1143/JJAP.30.1924
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-quality, well-controlled GaN/Al0.1Ga0.9N layered structures with periodicity varying from 4.5 nm to 60 nm have been successfully grown on (0001) sapphire substrates by Metalorganic Vapor Phase Epitaxy (MOVPE). The layered structure has been confirmed by double-crystal X-ray diffractometry. Photoluminescence peak energy showed a shift toward the higher-energy side with decreasing thickness of the GaN well layer, which is in good agreement with the calculation obtained from the Kronig-Penny analysis.
引用
收藏
页码：1924 / 1927
页数：4
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