HOLE TRANSIT IN TEFLON FILMS

被引：49

作者：

GROSS, B

SESSLER, GM

VONSEGGERN, H

WEST, JE

机构：

[1] Technische Hochschule Darmstadt, Dinkelocher

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 09期

关键词：

D O I：

10.1063/1.90864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transit of excess holes through 25-μm Teflon films has been observed. The holes are generated by electron-pulse ionization in the near-surface region of the samples. From the transit time we determine a mobility of 2×10-9 cm2/V s, independent of field, carrier density, penetration depth of the primary electrons, and length of the electron pulse. Results are discussed in terms of the conventional concept of trap-modulated mobility and of the alternative theory of dispersive hopping.

引用

页码：555 / 557

页数：3

共 22 条

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