AUGER AND ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDY OF INTERFACE FORMATION IN THE TI-SI SYSTEM

被引：36
作者：
WALLART, X
NYS, JP
ZENG, HS
DALMAI, G
LEFEBVRE, I
LANNOO, M
机构：
[1] Laboratoire D Etude des Surfaces et Interfaces, U.R.A. D0253, Institut Supérieur D Electronique du Nord, 59046 Lille Cedex
来源：
PHYSICAL REVIEW B | 1990年 / 41卷 / 05期
关键词：
D O I：
10.1103/PhysRevB.41.3087
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a detailed study of interface formation in the titanium-silicon (Ti-Si) system under different temperature conditions. We make use of electronic-structure calculations in order to interpret the silicon Si L2,3VV Auger line shape and the electron-energy-loss spectra. These techniques, together with low-energy electron diffraction and electron-microscopy observations and film-resistance data, allow us to discuss accurately the interface reactivity of the Ti-Si system with respect to temperature. © 1990 The American Physical Society.
引用
收藏
页码：3087 / 3096
页数：10
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