Measurement of the thickness of the oxygen-depleted layer in the Ag/YBa2Cu3O7-x/Ag structures of the electro-resistance memory

The paper presents the results of experimental investigations of the phenomenon of electro-resistance memory in the Ag/YBa2Cu3O7-x/Ag thin-film structure at room and liquid nitrogen temperature. On the basis of the obtained voltage-current and amplitude characteristics, the threshold values of the resistive switching voltage were determined. Differences in the levels of these voltages at different switching directions and temperatures are explained using a mechanism based on oxygen ion electro-diffusion via oxygen vacancies. Using the mathematical model of this mechanism on the basis of the switching voltage values obtained, the thickness of layers depleted in oxygen ions were determined, which play a fundamental role in the switching process. The obtained thicknesses from 1.2 to 10.6 nm are consistent with the literature data for similar structures.