MESOSCOPIC SILICON COUPLED SUPERCONDUCTING JUNCTIONS OF COSI2 FORMED IN A SELF-ALIGNED PROCESS

被引:1
作者
HILBRANDIE, GR
BAKKER, SJM
VANDERDRIFT, E
ROUSSEEUW, BAC
KLAPWIJK, TM
RADELAAR, S
机构
[1] Delft Institute of Micro Electronics and Submicron technology (DIMES), Delft University of Technology, 2600 GA Delft
[2] Department of Applied Physics, University of Groningen, 9747 AG Groningen
关键词
D O I
10.1016/0167-9317(94)90192-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Coplanar superconductor-semiconductor-superconductor junctions are fabricated using CoSi2 as a superconductor and heavily doped Si as a semiconductor. The CoSi2 is formed in a self-aligned process. In this article the fabrication process of the junctions is presented. Two types of samples are fabricated. The current path of samples of the first type is not well defined. Additional fabrication steps are done to constrict the current path of the second type of samples to the small silicon link. Measurements on both types of samples are presented. Supercurrent and characteristic behaviour in the voltage carrying state (subharmonic gap structure) is measured and analysed on samples with a well defined current path.
引用
收藏
页码:445 / 448
页数:4
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