DEPENDENCE OF THE STRUCTURAL AND OPTICAL-PROPERTIES OF GAAS-GA1-XALXAS MULTIQUANTUM-WELL STRUCTURES ON GROWTH TEMPERATURE

被引：78

作者：

WEISBUCH, C

DINGLE, R

PETROFF, PM

GOSSARD, AC

WIEGMANN, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.92212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：840 / 842

页数：3

共 11 条

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[5] CRYSTAL-GROWTH KINETICS IN (GAAS)N-(ALAS)M SUPER-LATTICES DEPOSITED BY MOLECULAR-BEAM EPITAXY .1. GROWTH ON SINGULAR (100)GAAS SUBSTRATES [J].

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[7]

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[8] EFFECT OF GROWTH TEMPERATURE ON THE PHOTO-LUMINESCENT SPECTRA FROM SN-DOPED GA1-XALXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

SWAMINATHAN, V ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :347-349

[9] EFFECT OF SUBSTRATE-TEMPERATURE ON THE CURRENT THRESHOLD OF GAAS-ALXGA1-X AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT ;

REINHART, FK ;

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APPLIED PHYSICS LETTERS, 1980, 36 (02) :118-120

[10] SUMMARY ABSTRACT - OPTICAL CHARACTERIZATION OF INTERFACE DISORDER IN MULTIQUANTUM WELL GAAS-ALXGA1-XAS SUPER-LATTICE STRUCTURES [J].

WEISBUCH, C ;

DINGLE, R ;

GOSSARD, AC ;

WEIGMANN, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1128-1129

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