2-DIMENSIONAL SIMULATION OF CONSTRICTED-MESA INGAASP/INP BURIED-HETEROSTRUCTURE LASERS

被引：13

作者：

GAULT, M ^{[1
]}

MAWBY, P ^{[1
]}

ADAMS, AR ^{[1
]}

TOWERS, M ^{[1
]}

机构：

[1] UNIV COLL SWANSEA,DEPT ELECT & ELECTR ENGN,SWANSEA SA2 8PP,WALES

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 08期

关键词：

D O I：

10.1109/3.301631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully two-dimensional self-consistent numerical model of the steady-state behavior of 1.3 mum constricted-mesa InGaAsP/InP buried-heterostructure lasers is presented. Devices operating at this wavelength are very temperature sensitive and therefore the model for the first time includes coupled solutions to the thermal as well as the electrical and optical equation sets. The temperature dependence is included in the Fermi-Dirac statistics, bandgaps, mobilities, densities of states, Auger recombination coefficients, intervalence band absorption, optical gain, and thermal conductivities. The lasing mode profiles, carrier distributions, threshold currents, and temperature characteristics are analyzed and good agreement is found with experimental results, including the temperature dependence of the threshold current and the prediction of a break-point temperature. The optimum design parameters are investigated for reduced threshold currents, and the effect of optical loss in the blocking regions on lateral-mode control is analyzed.

引用

页码：1691 / 1700

页数：10

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