NANOMETER-SCALE LITHOGRAPHY USING THE ATOMIC FORCE MICROSCOPE

被引：170
|
作者：
MAJUMDAR, A
ODEN, PI
CARREJO, JP
NAGAHARA, LA
GRAHAM, JJ
ALEXANDER, J
机构：
[1] ARIZONA STATE UNIV, DEPT MECH & AEROSP ENGN, TEMPE, AZ 85287 USA
[2] ARIZONA STATE UNIV, DEPT PHYS, TEMPE, AZ 85287 USA
[3] MOTOROLA INC, ADV TECHNOL LAB, MESA, AZ 85202 USA
[4] UNIV TOKYO, DEPT SYNTHET CHEM, BUNKYO KU, TOKYO 113, JAPAN
[5] PARK SCI INSTRUMENTS, SUNNYVALE, CA 94089 USA
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 19期
关键词：
D O I：
10.1063/1.108268
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate a new use of the atomic force microscope (AFM) for nanometer-scale lithography on ultrathin films of poly (methylmethacrylate) (PMMA). The PMMA films were chemically modified as both positive and negative resists due to energy transfer from a highly localized electron source provided by metallized AFM tips. We were able to fabricate a line pattern with 68 nm line periodicity with about 35 nm line widths.
引用
收藏
页码：2293 / 2295
页数：3
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