PHENOMENOLOGICAL ASPECTS OF CW MICROWAVE OSCILLATIONS IN GaAs

被引：20

作者：

Hakki, B. W. ^{[1
]}

Knight, S. ^{[1
]}

机构：

[1] Bell Tel Labs Inc, Murray Hill, NJ USA

来源：

SOLID STATE COMMUNICATIONS | 1965年 / 3卷 / 05期

关键词：

D O I：

10.1016/0038-1098(65)90228-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

CW microwave oscillations were produced in GaAs between (1.8-7.5) kMc at room temperature. The signal frequency was independent of applied voltage but had almost the same temperature dependence as the mobility. This led to the conclusion that the domains which accompany oscillations move In the semiconductor at a velocity which is almost independent of bias voltage.

引用

页码：89 / 91

页数：3

共 9 条

[1] CONTINUOUS MICROWAVE OSCILLATIONS OF CURRENT IN GAAS [J].

BRASLAU, N ;

GUNN, JB ;

STAPLES, JL .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (05) :545-&

[2] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J].

GUNN, JB .

SOLID STATE COMMUNICATIONS, 1963, 1 (04) :88-91

[3] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].

GUNN, JB .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&

[4] CW MICROWAVE OSCILLATIONS IN GAAS [J].

HAKKI, BW ;

IRVIN, JC .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (01) :80-&

[5] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J].

HILSUM, C .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02) :185-&

[6] THEORY OF GUNN EFFECT [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1736-&

[7] ELECTRICAL TRANSIENTS IN HIGH RESISTIVITY GALLIUM ARSENIDE [J].

NORTHROP, DC ;

THORNTON, PR ;

TREZISE, KE .

SOLID-STATE ELECTRONICS, 1964, 7 (01) :17-&

[8] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J].

RIDLEY, BK ;

WATKINS, TB .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500) :293-&

[9] SPECIFIC NEGATIVE RESISTANCE IN SOLIDS [J].

RIDLEY, BK .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530) :954-&

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