HIGH-POWER 0.8 MICRO-M INGAASP-GAAS SCH SQW LASERS

被引：178

作者：

GARBUZOV, DZ

ANTONISHKIS, NY

BONDAREV, AD

GULAKOV, AB

ZHIGULIN, SN

KATSAVETS, NI

KOCHERGIN, AV

RAFAILOV, EV

机构：

[1] A. F. Ioffe Physico-Technical Institute, Poly tecknicheskaya, 194 021, Leningrad

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 06期

关键词：

D O I：

10.1109/3.89973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In studies of lambda = 0.8-mu-m, InGaAsP-GaAs SCH SQW laser diodes with a 100-mu-m wide stripe, a CW optical power of 5.3 W has been obtained. As shown by measurements of the local temperature rise near the active region, the rate of temperature increase above the lasing threshold is determined by the diode efficiency. No failures which could be attributed to a catastrophic growth of dark line defects have been observed to occur in these diodes.

引用

页码：1531 / 1536

页数：6

共 12 条

[1]

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[2]

ALVEROV ZI, 1986, 18TH P INT C PHYS SE, P203

[3]

Antonishkis N. Yu., 1988, Soviet Technical Physics Letters, V14, P310

[4] MAPPING OF LOCAL TEMPERATURES ON MIRRORS OF GAAS/ALGAAS LASER-DIODES [J].