HIGHLY CONDUCTIVE TIO2 THIN-FILMS PREPARED BY EB-MODIFICATION

被引：13

作者：

GOFUKU, E

TOYODA, Y

UEHARA, Y

KOHARA, M

NUNOSHITA, M

机构：

[1] Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, 661

来源：

APPLIED SURFACE SCIENCE | 1991年 / 48-9卷

关键词：

D O I：

10.1016/0169-4332(91)90355-N

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Changes in TiO2 thin films caused by electron-beam (EB) bombardment have been investigated by measuring their structural, electrical and optical properties. The TiO2 thin films of 500 nm thickness were deposited on fused silica substrates by the EB-evaporation technique. These as-deposited films are in a highly insulating amorphous state (more than 10(11) OMEGA m). By using an EB of 10 kV and 30 mA, the as-deposited film is modified to be in a crystalline (anatase) state with a low resistivity of less than 5 x 10(-4) OMEGA m.

引用

页码：343 / 350

页数：8

共 28 条

[1]

ARATA Y, 1986, HIGH TEMP SOC JPN, V6, P228

[2]

BICELLI LP, 1985, INT J HYDROGEN ENERG, V10, P645, DOI 10.1016/0360-3199(85)90003-5

[3] ELECTRICAL AND EPR STUDIES OF ELECTROLYTICALLY GROWN TIO2 (RUTILE) [J].